ITO-free inverted polymer solar cells with ZnO:Al cathodes and stable top anodes
Identifieur interne : 001A48 ( Main/Repository ); précédent : 001A47; suivant : 001A49ITO-free inverted polymer solar cells with ZnO:Al cathodes and stable top anodes
Auteurs : RBID : Pascal:12-0090010Descripteurs français
- Pascal (Inist)
- Addition étain, Cellule solaire organique, Cathode, Anode, Haute performance, Optimisation, Travail sortie, Ecoulement eau, Evaluation performance, Couche active, Courant continu, Pulvérisation cathodique, Epaisseur, Résistivité couche, Couche tampon, Organe commande, Norme, Revêtement, Etude comparative, Courant photoélectrique, Cellule solaire, Oxyde d'indium, Oxyde de zinc, Matériau conducteur, Matériau transparent, Thiophène dérivé polymère, Acide butyrique, Ester, Composé du fullerène, Verre, Oxyde de molybdène, Matériau revêtu, Alliage base aluminium, Styrènesulfonate polymère, Mélange polymère, ITO, ZnO, MoO3.
- Wicri :
English descriptors
- KwdEn :
- Active layer, Aluminium base alloys, Anode, Buffer layer, Butyric acid, Cathode, Cathodic sputtering, Coated material, Coatings, Comparative study, Conducting material, Control device, Direct current, Ester, Fullerene compounds, Glass, High performance, Indium oxide, Molybdenum oxide, Optimization, Organic solar cells, Performance evaluation, Photoelectric current, Polymer blends, Sheet resistivity, Solar cell, Standards, Styrenesulfonate polymer, Thickness, Thiophene derivative polymer, Tin addition, Transparent material, Water flow, Work function, Zinc oxide.
Abstract
We report on the application of ZnO:Al as the transparent conductive oxide in high performance inverted polymer solar cells. We show that the optimized inverted architecture, which does not contain low work function metals or water-based transport layers, can be employed without sacrificing device efficiency. The widely studied P3HT:PCBM donor-acceptor system was chosen for the active layer. ZnO:Al layers were produced by dc-magnetron sputtering on glass substrates and used as the cathode. The thickness of ZnO:Al was optimized to achieve a low sheet resistance while maintaining high transmission. The resulting ZnO:Al layers were smoother than the reference ITO samples, and the active layers could be processed directly onto ZnO:Al without employing additional buffer layers. The structure of the top anodic contact was also optimized. Initial devices with an Au layer demonstrated poor results, and device performance improved when a MoO3/Ag anode was used. Control devices in the standard forward structure using commercial ITO coated glass substrates were compared to the ZnO:Al based cells. Higher photocurrents were obtained in the inverted structures than in the ITO-based solar cells due to the higher transmittance of ZnO:Al in the spectral range where the blend absorbs.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">ITO-free inverted polymer solar cells with ZnO:Al cathodes and stable top anodes</title><author><name sortKey="De Sio, Antonietta" uniqKey="De Sio A">Antonietta De Sio</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg</s1><s2>26111 Oldenburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>26111 Oldenburg</wicri:noRegion><wicri:noRegion>Carl von Ossietzky University of Oldenburg</wicri:noRegion><wicri:noRegion>26111 Oldenburg</wicri:noRegion></affiliation></author><author><name sortKey="Chakanga, Kambulakwao" uniqKey="Chakanga K">Kambulakwao Chakanga</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division Photovoltaics, Next Energy, EWE-Forschungszentrum für Energietechnologie e.V</s1><s2>26129 Oldenburg</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>26129 Oldenburg</wicri:noRegion><wicri:noRegion>EWE-Forschungszentrum für Energietechnologie e.V</wicri:noRegion><wicri:noRegion>26129 Oldenburg</wicri:noRegion></affiliation></author><author><name sortKey="Sergeev, Oleg" uniqKey="Sergeev O">Oleg Sergeev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division Photovoltaics, Next Energy, EWE-Forschungszentrum für Energietechnologie e.V</s1><s2>26129 Oldenburg</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>26129 Oldenburg</wicri:noRegion><wicri:noRegion>EWE-Forschungszentrum für Energietechnologie e.V</wicri:noRegion><wicri:noRegion>26129 Oldenburg</wicri:noRegion></affiliation></author><author><name sortKey="Von Maydell, Karsten" uniqKey="Von Maydell K">Karsten Von Maydell</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Division Photovoltaics, Next Energy, EWE-Forschungszentrum für Energietechnologie e.V</s1><s2>26129 Oldenburg</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>26129 Oldenburg</wicri:noRegion><wicri:noRegion>EWE-Forschungszentrum für Energietechnologie e.V</wicri:noRegion><wicri:noRegion>26129 Oldenburg</wicri:noRegion></affiliation></author><author><name sortKey="Parisi, J Rgen" uniqKey="Parisi J">J Rgen Parisi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg</s1><s2>26111 Oldenburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>26111 Oldenburg</wicri:noRegion><wicri:noRegion>Carl von Ossietzky University of Oldenburg</wicri:noRegion><wicri:noRegion>26111 Oldenburg</wicri:noRegion></affiliation></author><author><name sortKey="Von Hauff, Elizabeth" uniqKey="Von Hauff E">Elizabeth Von Hauff</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Institute of Physics, Albert-Ludwigs University of Freiburg</s1><s2>79104 Freiburg</s2><s3>DEU</s3><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Fraunhofer Institute for Solar Energy Systems (ISE</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Fribourg-en-Brisgau</region><settlement type="city">Fribourg-en-Brisgau</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0090010</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0090010 INIST</idno><idno type="RBID">Pascal:12-0090010</idno><idno type="wicri:Area/Main/Corpus">002200</idno><idno type="wicri:Area/Main/Repository">001A48</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active layer</term><term>Aluminium base alloys</term><term>Anode</term><term>Buffer layer</term><term>Butyric acid</term><term>Cathode</term><term>Cathodic sputtering</term><term>Coated material</term><term>Coatings</term><term>Comparative study</term><term>Conducting material</term><term>Control device</term><term>Direct current</term><term>Ester</term><term>Fullerene compounds</term><term>Glass</term><term>High performance</term><term>Indium oxide</term><term>Molybdenum oxide</term><term>Optimization</term><term>Organic solar cells</term><term>Performance evaluation</term><term>Photoelectric current</term><term>Polymer blends</term><term>Sheet resistivity</term><term>Solar cell</term><term>Standards</term><term>Styrenesulfonate polymer</term><term>Thickness</term><term>Thiophene derivative polymer</term><term>Tin addition</term><term>Transparent material</term><term>Water flow</term><term>Work function</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Addition étain</term><term>Cellule solaire organique</term><term>Cathode</term><term>Anode</term><term>Haute performance</term><term>Optimisation</term><term>Travail sortie</term><term>Ecoulement eau</term><term>Evaluation performance</term><term>Couche active</term><term>Courant continu</term><term>Pulvérisation cathodique</term><term>Epaisseur</term><term>Résistivité couche</term><term>Couche tampon</term><term>Organe commande</term><term>Norme</term><term>Revêtement</term><term>Etude comparative</term><term>Courant photoélectrique</term><term>Cellule solaire</term><term>Oxyde d'indium</term><term>Oxyde de zinc</term><term>Matériau conducteur</term><term>Matériau transparent</term><term>Thiophène dérivé polymère</term><term>Acide butyrique</term><term>Ester</term><term>Composé du fullerène</term><term>Verre</term><term>Oxyde de molybdène</term><term>Matériau revêtu</term><term>Alliage base aluminium</term><term>Styrènesulfonate polymère</term><term>Mélange polymère</term><term>ITO</term><term>ZnO</term><term>MoO3</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Norme</term><term>Verre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the application of ZnO:Al as the transparent conductive oxide in high performance inverted polymer solar cells. We show that the optimized inverted architecture, which does not contain low work function metals or water-based transport layers, can be employed without sacrificing device efficiency. The widely studied P3HT:PCBM donor-acceptor system was chosen for the active layer. ZnO:Al layers were produced by dc-magnetron sputtering on glass substrates and used as the cathode. The thickness of ZnO:Al was optimized to achieve a low sheet resistance while maintaining high transmission. The resulting ZnO:Al layers were smoother than the reference ITO samples, and the active layers could be processed directly onto ZnO:Al without employing additional buffer layers. The structure of the top anodic contact was also optimized. Initial devices with an Au layer demonstrated poor results, and device performance improved when a MoO<sub>3</sub>/Ag anode was used. Control devices in the standard forward structure using commercial ITO coated glass substrates were compared to the ZnO:Al based cells. Higher photocurrents were obtained in the inverted structures than in the ITO-based solar cells due to the higher transmittance of ZnO:Al in the spectral range where the blend absorbs.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>98</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>ITO-free inverted polymer solar cells with ZnO:Al cathodes and stable top anodes</s1></fA08><fA11 i1="01" i2="1"><s1>DE SIO (Antonietta)</s1></fA11><fA11 i1="02" i2="1"><s1>CHAKANGA (Kambulakwao)</s1></fA11><fA11 i1="03" i2="1"><s1>SERGEEV (Oleg)</s1></fA11><fA11 i1="04" i2="1"><s1>VON MAYDELL (Karsten)</s1></fA11><fA11 i1="05" i2="1"><s1>PARISI (Jürgen)</s1></fA11><fA11 i1="06" i2="1"><s1>VON HAUFF (Elizabeth)</s1></fA11><fA14 i1="01"><s1>Energy and Semiconductor Research Laboratory, Institute of Physics, Carl von Ossietzky University of Oldenburg</s1><s2>26111 Oldenburg</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Division Photovoltaics, Next Energy, EWE-Forschungszentrum für Energietechnologie e.V</s1><s2>26129 Oldenburg</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Physics, Albert-Ludwigs University of Freiburg</s1><s2>79104 Freiburg</s2><s3>DEU</s3><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>Fraunhofer Institute for Solar Energy Systems (ISE</s1><s2>79110 Freiburg</s2><s3>DEU</s3><sZ>6 aut.</sZ></fA14><fA20><s1>52-56</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000508662100050</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0090010</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the application of ZnO:Al as the transparent conductive oxide in high performance inverted polymer solar cells. We show that the optimized inverted architecture, which does not contain low work function metals or water-based transport layers, can be employed without sacrificing device efficiency. The widely studied P3HT:PCBM donor-acceptor system was chosen for the active layer. ZnO:Al layers were produced by dc-magnetron sputtering on glass substrates and used as the cathode. The thickness of ZnO:Al was optimized to achieve a low sheet resistance while maintaining high transmission. The resulting ZnO:Al layers were smoother than the reference ITO samples, and the active layers could be processed directly onto ZnO:Al without employing additional buffer layers. The structure of the top anodic contact was also optimized. Initial devices with an Au layer demonstrated poor results, and device performance improved when a MoO<sub>3</sub>/Ag anode was used. Control devices in the standard forward structure using commercial ITO coated glass substrates were compared to the ZnO:Al based cells. Higher photocurrents were obtained in the inverted structures than in the ITO-based solar cells due to the higher transmittance of ZnO:Al in the spectral range where the blend absorbs.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Addition étain</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Tin addition</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Adición estaño</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Cellule solaire organique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Organic solar cells</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Cathode</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Cathode</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Cátodo</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Anode</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" 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i1="18" i2="X" l="SPA"><s0>Revestimiento</s0><s5>18</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Etude comparative</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Comparative study</s0><s5>19</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Estudio comparativo</s0><s5>19</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Courant photoélectrique</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Photoelectric current</s0><s5>20</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Corriente fotoeléctrica</s0><s5>20</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>21</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Solar cell</s0><s5>21</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Célula solar</s0><s5>21</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Indium oxide</s0><s5>22</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Indio óxido</s0><s5>22</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>23</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>Matériau conducteur</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="ENG"><s0>Conducting material</s0><s5>24</s5></fC03><fC03 i1="24" i2="X" l="SPA"><s0>Material conductor</s0><s5>24</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Matériau transparent</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Transparent material</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Material transparente</s0><s5>25</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Thiophène dérivé polymère</s0><s2>NK</s2><s5>26</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Thiophene derivative polymer</s0><s2>NK</s2><s5>26</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Tiofeno derivado polímero</s0><s2>NK</s2><s5>26</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Acide butyrique</s0><s2>NK</s2><s5>27</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Butyric acid</s0><s2>NK</s2><s5>27</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Butírico ácido</s0><s2>NK</s2><s5>27</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Ester</s0><s5>28</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Ester</s0><s5>28</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Ester</s0><s5>28</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Composé du fullerène</s0><s5>29</s5></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Fullerene compounds</s0><s5>29</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>Verre</s0><s5>30</s5></fC03><fC03 i1="30" i2="X" l="ENG"><s0>Glass</s0><s5>30</s5></fC03><fC03 i1="30" i2="X" l="SPA"><s0>Vidrio</s0><s5>30</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>Oxyde de molybdène</s0><s5>31</s5></fC03><fC03 i1="31" i2="X" l="ENG"><s0>Molybdenum oxide</s0><s5>31</s5></fC03><fC03 i1="31" i2="X" l="SPA"><s0>Molibdeno óxido</s0><s5>31</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>Matériau revêtu</s0><s5>32</s5></fC03><fC03 i1="32" i2="X" l="ENG"><s0>Coated material</s0><s5>32</s5></fC03><fC03 i1="32" i2="X" l="SPA"><s0>Material revestido</s0><s5>32</s5></fC03><fC03 i1="33" i2="3" l="FRE"><s0>Alliage base aluminium</s0><s2>NK</s2><s5>33</s5></fC03><fC03 i1="33" i2="3" l="ENG"><s0>Aluminium base alloys</s0><s2>NK</s2><s5>33</s5></fC03><fC03 i1="34" i2="X" l="FRE"><s0>Styrènesulfonate polymère</s0><s2>NK</s2><s5>34</s5></fC03><fC03 i1="34" i2="X" l="ENG"><s0>Styrenesulfonate polymer</s0><s2>NK</s2><s5>34</s5></fC03><fC03 i1="34" i2="X" l="SPA"><s0>Estireno sulfonato polímero</s0><s2>NK</s2><s5>34</s5></fC03><fC03 i1="35" i2="3" l="FRE"><s0>Mélange polymère</s0><s5>35</s5></fC03><fC03 i1="35" i2="3" l="ENG"><s0>Polymer blends</s0><s5>35</s5></fC03><fC03 i1="36" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="37" i2="X" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="38" i2="X" l="FRE"><s0>MoO3</s0><s4>INC</s4><s5>84</s5></fC03><fN21><s1>072</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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